검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
EPR study of electron irradiation-induced defects in semi-insulating SiC : V von Bardeleben HJ, Cantin JL, Reshanov SA, Rastegaev VP Materials Science Forum, 433-4, 507, 2002 |
| 2 |
A simple model of 3d impurities in cubic silicon carbide Parfenova II, Yuryeva EI, Reshanov SA, Rastegaev VP, Ivanovskii AL Materials Science Forum, 433-4, 515, 2002 |
| 3 |
Features of semi-insulating SiC single-crystal growth by physical vapor transport Reshanov SA, Rastegaev VP, Tairov YM Materials Science Forum, 353-356, 53, 2001 |
| 4 |
Silicon carbide substrates for epitaxial growth of aluminium nitride by chloride-transport process Avrov DD, Dorozhkin SI, Lebedev AO, Rastegaev VP, Tairov YM Materials Science Forum, 338-3, 1515, 2000 |