검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET Aniel F, Enciso-Aguilar M, Giguerre L, Crozat P, Adde R, Mack T, Seiler U, Hackbarth T, Herzog HJ, Konig U, Raynor B Solid-State Electronics, 47(2), 283, 2003 |
| 2 |
Process Technology for InGaAs/InAlAs Modulation-Doped Field-Effect Transistors on InP Substrates Fink T, Raynor B, Haupt M, Kohler K, Braunstein J, Grun N, Hornung J Journal of Vacuum Science & Technology B, 12(6), 3332, 1994 |