검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures Kim ZS, Lee HS, Na J, Bae SB, Nam E, Lim JW Solid-State Electronics, 140, 12, 2018 |
| 2 |
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT Acurio E, Crupi F, Magnone P, Trojman L, Meneghesso G, Iucolano F Solid-State Electronics, 132, 49, 2017 |
| 3 |
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors Lee JG, Kim HS, Seo KS, Cho CH, Cha HY Solid-State Electronics, 122, 32, 2016 |
| 4 |
High performance AlGaN/GaN HEMTs with recessed gate Sano Y, Mita J, Yamada T, Makita T, Kaifu K, Ishikawa H, Egawa T, Jimbo T Materials Science Forum, 389-3, 1511, 2002 |