| 1 |
Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer
Prasad CV, Reddy MSP, Reddy VR, Park C
Applied Surface Science, 427, 670, 2018 |
| 2 |
Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode
Balaram N, Reddy MSP, Reddy VR, Park C
Thin Solid Films, 619, 231, 2016 |
| 3 |
Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode
Reddy MSP, Son DH, Lee JH, Jang JS, Reddy VR
Materials Chemistry and Physics, 143(2), 801, 2014 |
| 4 |
Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range
Lakshmi BP, Reddy MSP, Kumar AA, Reddy VR
Current Applied Physics, 12(3), 765, 2012 |
| 5 |
Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure
Reddy VR, Reddy MSP, Kumar AA, Choi CJ
Thin Solid Films, 520(17), 5715, 2012 |
| 6 |
Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature
Reddy MSP, Kumar AA, Reddy VR
Thin Solid Films, 519(11), 3844, 2011 |
