화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 mu A)
Belmonte A, Fantini A, Redolfi A, Houssa M, Jurczak M, Goux L
Solid-State Electronics, 125, 189, 2016
2 Stack optimization of oxide-based RRAM for fast write speed (< 1 mu s) at low operating current (< 10 mu A)
Chen CY, Goux L, Fantini A, Degraeve R, Redolfi A, Groeseneken G, Jurczak M
Solid-State Electronics, 125, 198, 2016
3 Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi A, Kubicek S, Rooyackers R, Kim MS, Sleeckx E, Devriendt K, Shamiryan D, Vandeweyer T, Delande T, Horiguchi N, Togo M, Wouters JMD, Jurczak M, Hoffmann T, Cockburn A, Gravey V, Diehl DL
Solid-State Electronics, 71, 106, 2012
4 Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson LA, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, Biesemans S, Hoffmann T
Solid-State Electronics, 54(9), 855, 2010