검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Application of a novel test system to characterize single-event effects at cryogenic temperatures Ramachandran V, Gadlage MJ, Ahlbin JR, Narasimham B, Alles ML, Reed RA, Bhuva BL, Massengill LW, Black JD, Foster CN Solid-State Electronics, 54(10), 1052, 2010 |
| 2 |
Proton-induced SEU in SiGe digital logic at cryogenic temperatures Sutton AK, Moen K, Cressler JD, Carts MA, Marshall PW, Pellish JA, Ramachandran V, Reed RA, Alles ML, Nju G Solid-State Electronics, 52(10), 1652, 2008 |
| 3 |
The operation of 0.35 mu m partially depleted SOICMOS technology in extreme environments Li Y, Niu GF, Cressler JD, Patel J, Liu ST, Reed RA, Mojarradi MM, Blalock BJ Solid-State Electronics, 47(6), 1111, 2003 |
| 4 |
The effects of operating bias conditions on the proton tolerance of SiGeHBTs Zhang SM, Cressler JD, Niu GF, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL Solid-State Electronics, 47(10), 1729, 2003 |