검색결과 : 10건
No. | Article |
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1 |
Heterogeneous twinning during directional solidification of multi-crystalline silicon Jhang JW, Regula G, Reinhart G, Mangelinck-Noel N, Lan CW Journal of Crystal Growth, 508, 42, 2019 |
2 |
Growth undercooling in multi-crystalline pure silicon and in silicon containing light impurities (C and O) Riberi-Beridot T, Tsoutsouva MG, Regula G, Reinhart G, Perichaud I, Baruchel J, Mangelinck-Noel N Journal of Crystal Growth, 466, 64, 2017 |
3 |
{111} facet growth laws and grain competition during silicon crystallization Stamelou V, Tsoutsouva MG, Riberi-Beridot T, Reinhart G, Regula G, Baruchel J, Mangelinck-Noel N Journal of Crystal Growth, 479, 1, 2017 |
4 |
Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells Raissi M, Regula G, Lazzari JL Solar Energy Materials and Solar Cells, 144, 775, 2016 |
5 |
Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics Raissi M, Regula G, Belgacem CH, Rochdi N, Bozzo-Escoubas S, Coudreau C, Hollander B, Fnaiech M, D'Avitaya FA, Lazzari JL Journal of Crystal Growth, 328(1), 18, 2011 |
6 |
Effect of Si and He implantation in the formation of ultra shallow junctions in Si Xu M, Regula G, Daineche R, Oliviero E, Hakim B, Ntsoenzok E, Pichaud B Thin Solid Films, 518(9), 2354, 2010 |
7 |
Optical and nuclear characterization of Xe-induced nanoporosity in SiO2 Naas A, De Sousa-Meneses D, Hakim B, Regula G, Beaufort MF, Belaidi A, Ntsoenzok E Thin Solid Films, 518(16), 4721, 2010 |
8 |
Phenon cluster analysis as a method to investigate epidemiological relatedness between sources of Campylobacter jejuni Wieland B, Wittwer M, Regula G, Wassenaar TM, Burnens AP, Keller J, Stark KDC Journal of Applied Microbiology, 100(2), 316, 2006 |
9 |
Dynamical study of dislocations and 4H -> 3C transformation induced by stress in (11-20) 4H-SiC Idrissi H, Lancin M, Douin J, Regula G, Pichaud B Materials Science Forum, 483, 299, 2005 |
10 |
Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy Idrissi H, Lancin M, Regula G, Pichaud B Materials Science Forum, 457-460, 355, 2004 |