화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Heterogeneous twinning during directional solidification of multi-crystalline silicon
Jhang JW, Regula G, Reinhart G, Mangelinck-Noel N, Lan CW
Journal of Crystal Growth, 508, 42, 2019
2 Growth undercooling in multi-crystalline pure silicon and in silicon containing light impurities (C and O)
Riberi-Beridot T, Tsoutsouva MG, Regula G, Reinhart G, Perichaud I, Baruchel J, Mangelinck-Noel N
Journal of Crystal Growth, 466, 64, 2017
3 {111} facet growth laws and grain competition during silicon crystallization
Stamelou V, Tsoutsouva MG, Riberi-Beridot T, Reinhart G, Regula G, Baruchel J, Mangelinck-Noel N
Journal of Crystal Growth, 479, 1, 2017
4 Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells
Raissi M, Regula G, Lazzari JL
Solar Energy Materials and Solar Cells, 144, 775, 2016
5 Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Raissi M, Regula G, Belgacem CH, Rochdi N, Bozzo-Escoubas S, Coudreau C, Hollander B, Fnaiech M, D'Avitaya FA, Lazzari JL
Journal of Crystal Growth, 328(1), 18, 2011
6 Effect of Si and He implantation in the formation of ultra shallow junctions in Si
Xu M, Regula G, Daineche R, Oliviero E, Hakim B, Ntsoenzok E, Pichaud B
Thin Solid Films, 518(9), 2354, 2010
7 Optical and nuclear characterization of Xe-induced nanoporosity in SiO2
Naas A, De Sousa-Meneses D, Hakim B, Regula G, Beaufort MF, Belaidi A, Ntsoenzok E
Thin Solid Films, 518(16), 4721, 2010
8 Phenon cluster analysis as a method to investigate epidemiological relatedness between sources of Campylobacter jejuni
Wieland B, Wittwer M, Regula G, Wassenaar TM, Burnens AP, Keller J, Stark KDC
Journal of Applied Microbiology, 100(2), 316, 2006
9 Dynamical study of dislocations and 4H -> 3C transformation induced by stress in (11-20) 4H-SiC
Idrissi H, Lancin M, Douin J, Regula G, Pichaud B
Materials Science Forum, 483, 299, 2005
10 Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy
Idrissi H, Lancin M, Regula G, Pichaud B
Materials Science Forum, 457-460, 355, 2004