검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)(3) Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM Journal of Vacuum Science & Technology B, 24(3), 1572, 2006 |
| 2 |
Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N-2/Ar gas mix Reifsnider JM, Oye MM, Govindaraju S, Holmes AL Journal of Crystal Growth, 280(1-2), 7, 2005 |
| 3 |
Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, Holmes AL, Mattord TJ Journal of Vacuum Science & Technology A, 23(6), 1737, 2005 |
| 4 |
Inert gas maintenance for molecular-beam epitaxy systems Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, Holmes AL, Mattord TJ Journal of Vacuum Science & Technology B, 23(3), 1257, 2005 |
| 5 |
Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN Reifsnider JM, Govindaraju S, Holmes AL Journal of Crystal Growth, 243(3-4), 396, 2002 |
| 6 |
Improved quality GaN films grown by molecular beam epitaxy on sapphire Reifsnider JM, Gotthold DW, Holmes AL, Streetman BG Journal of Vacuum Science & Technology B, 16(3), 1278, 1998 |