화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 MOVPE growth of GaN on Si(111) substrates
Dadgar A, Poschenrieder M, Blasing J, Contreras O, Bertram F, Riemann T, Reiher A, Kunze M, Daumiller I, Krtschil A, Diez A, Kaluza A, Modlich A, Kamp M, Christen J, Ponce FA, Kohn E, Krost A
Journal of Crystal Growth, 248, 556, 2003
2 Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
Reiher A, Blasing J, Dadgar A, Diez A, Krost A
Journal of Crystal Growth, 248, 563, 2003