검색결과 : 2건
No. | Article |
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1 |
MOVPE growth of GaN on Si(111) substrates Dadgar A, Poschenrieder M, Blasing J, Contreras O, Bertram F, Riemann T, Reiher A, Kunze M, Daumiller I, Krtschil A, Diez A, Kaluza A, Modlich A, Kamp M, Christen J, Ponce FA, Kohn E, Krost A Journal of Crystal Growth, 248, 556, 2003 |
2 |
Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers Reiher A, Blasing J, Dadgar A, Diez A, Krost A Journal of Crystal Growth, 248, 563, 2003 |