검색결과 : 11건
No. | Article |
---|---|
1 |
Void fraction distribution in a bisectional bubble column reactor Bombac A, Rek Z, Levec J AIChE Journal, 65(4), 1186, 2019 |
2 |
Numerical simulation of gas jet in liquid crossflow with high mean jet to crossflow velocity ratio Rek Z, Gregorc J, Bouaifi M, Daniel C Chemical Engineering Science, 172, 667, 2017 |
3 |
CFD based mini- vs. micro-system delineation in elongated bubble flow regime Rek Z, Zun I International Journal of Multiphase Flow, 59, 73, 2014 |
4 |
Soil thermal conductivity prediction for district heating pre-insulated pipeline in operation Perpar M, Rek Z, Bajric S, Zun I Energy, 44(1), 197, 2012 |
5 |
Crystal growth of B12As2 on SiC substrate by CVD method Nagarajan R, Xu Z, Edgar JH, Baig F, Chaudhuri J, Rek Z, Payzant EA, Meyer HM, Pomeroy J, Kuball M Journal of Crystal Growth, 273(3-4), 431, 2005 |
6 |
Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy Zhuang D, Edgar JH, Strojek B, Chaudhuri J, Rek Z Journal of Crystal Growth, 262(1-4), 89, 2004 |
7 |
Bulk AlN crystal growth by direct heating of the source using microwaves Zhuang D, Edgar JH, Liu B, Huey HE, Jiang HX, Lin JY, Kuball M, Mogal F, Chaudhuri J, Rek Z Journal of Crystal Growth, 262(1-4), 168, 2004 |
8 |
Reduction of dislocation density in GaN films on sapphire using AlN interlayers Chaudhuri J, George JT, Kolske DD, Wickenden AE, Henry RL, Rek Z Journal of Materials Science, 37(7), 1449, 2002 |
9 |
The effect of in situ surface treatment on the growth of 3C-SiC thin films on 6H-SiC substrate - An x-ray triple crystal diffractometry and synchrotron x-ray topography study Chaudhuri J, George JT, Edgar JH, Xie ZY, Rek Z Materials Science Forum, 338-3, 1045, 2000 |
10 |
A comparison of aluminum nitride freely nucleated and seeded on 6H-silicon carbide Edgar JH, Robins LH, Coatney SE, Liu L, Chaudhuri J, Ignatiev K, Rek Z Materials Science Forum, 338-3, 1599, 2000 |