1 |
Sub-30 nm patterning of molecular resists based on crosslinking through tip based oxidation Lorenzoni M, Wagner D, Neuber C, Schmidt HW, Perez-Murano F Applied Surface Science, 442, 106, 2018 |
2 |
Selective etching of PDMS: Etching as a negative tone resist Szilasi SZ, Juhasz L Applied Surface Science, 447, 697, 2018 |
3 |
Selective etching of PDMS: Etching technique for application as a positive tone resist Szilasi SZ, Cserhati C Applied Surface Science, 457, 662, 2018 |
4 |
방향족 무수물 기반의 에폭시 변성 아크릴레이트 바인더 합성 및 SiO2 레지스트 제조에 관한 연구 김하림, 김도현, 김영운, 이운영, 배진영 Polymer(Korea), 42(4), 551, 2018 |
5 |
Synthesis of hyperbranched polyacetals containing C-(4-t-butylbenz)calix [4] resorcinarene: Resist properties for extreme ultraviolet (EUV) lithography Kudo H, Fukunaga M, Shiotsuki K, Takeda H, Yamamoto H, Kozawa T, Watanabe T Reactive & Functional Polymers, 131, 361, 2018 |
6 |
Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures Scrymgeour DA, Baca A, Fishgrab K, Simonson RJ, Marshall M, Bussmann E, Nakakura CY, Anderson M, Misra S Applied Surface Science, 423, 1097, 2017 |
7 |
Co and terpolymer reactivity ratios of chemically amplified resists Pujari NS, Wang MX, Gonsalves KE Polymer, 118, 201, 2017 |
8 |
One-pot synthesis of molecular glass photoresists based on beta-cyclodextrin containing a t-butyloxy carbonyl group for i-line lithography Li H, Zhou Z, Liu JC, Xu WJ, Liu R, Liu XY Polymer Bulletin, 74(4), 1091, 2017 |
9 |
Dynamics of radical cations of poly(4-hydroxystyrene) in the presence and absence of triphenylsulfonium triflate as determined by pulse radiolysis of its highly concentrated solution Okamoto K, Ishida T, Yamamoto H, Kozawa T, Fujiyoshi R, Umegaki K Chemical Physics Letters, 657, 44, 2016 |
10 |
Non-chemically amplified resists containing polyhedral oligomeric silsesquioxane for a bilayer resist system Woo SA, Choi SY, Kim JB Polymer, 98, 336, 2016 |