화학공학소재연구정보센터
검색결과 : 33건
No. Article
1 Properties of materials for resistive RAM based on HfO2(first principles calculations)
Balabai RM, Zalevskyi DV
Molecular Crystals and Liquid Crystals, 700(1), 95, 2020
2 Properties of materials for resistive RAM based on HfO2(first principles calculations)
Balabai RM, Zalevskyi DV
Molecular Crystals and Liquid Crystals, 700(1), 95, 2020
3 Interfacial graphene modulated energetic behavior of the point-defect at the Au/HfO2 interface
Zhu LG, Zhang XY, Zhou J, Sun ZM
Applied Surface Science, 489, 608, 2019
4 High-efficiency magnetic modulation in Ti/ZnO/Pt resistive random-access memory devices using amorphous zinc oxide film
Ren SX, Dong WC, Tang H, Tang LZ, Li ZH, Sun Q, Yang HF, Yang ZG, Zhao JJ
Applied Surface Science, 488, 92, 2019
5 Resistive random-access memory with an a-Si/SiNx double-layer
Kwon HT, Lee WJ, Choi HS, Wee D, Park YJ, Kim B, Kim MH, Kim S, Park BG, Kim Y
Solid-State Electronics, 158, 64, 2019
6 Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer
Tao Y, Ding WT, Wang ZQ, Xu HY, Zhao XN, Li XH, Liu WZ, Ma JG, Liu YC
Applied Surface Science, 440, 107, 2018
7 Parasitic engineering for RRAM control
Shrestha PR, Nminibapiel DM, Veksler D, Campbell JP, Ryan JT, Baumgart H, Cheung KP
Solid-State Electronics, 150, 41, 2018
8 Effect of bottom electrode materials on resistive switching of flexible poly (N-vinylcarbazole) film embedded with TiO2 nanoparticles
Li JC, Zhang C, Shao SJ
Thin Solid Films, 664, 136, 2018
9 Memory properties of (110) preferring oriented CH3NH3PbI3 perovskite film prepared using PbS-buffered three-step growth method
Wu HT, Chen YF, Shih CF, Leu CC, Wu SH
Thin Solid Films, 660, 320, 2018
10 Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications
Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Shih CC, Wu CH, Yang CC, Chen WC, Lin JC, Wang MH, Zheng HX, Chen MC, Sze SM
Applied Surface Science, 414, 224, 2017