검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Resistive RAMs as analog trimming elements Aziza H, Perez A, Portal JM Solid-State Electronics, 142, 52, 2018 |
| 2 |
Resistive switching of reactive sputtered TiO2 based memristor in crossbar geometry Efeoglu H, Gullulu S, Karacali T Applied Surface Science, 350, 10, 2015 |
| 3 |
A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM Aziza H, Bocquet M, Moreau M, Portal JM Solid-State Electronics, 103, 73, 2015 |
| 4 |
Static impedance behavior of programmable metallization cells Rajabi S, Saremi M, Barnaby HJ, Edwards A, Kozicki MN, Mitkova M, Mahalanabis D, Gonzalez-Velo Y, Mahmud A Solid-State Electronics, 106, 27, 2015 |
| 5 |
Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices Recher S, Yalon E, Ritter D, Riess I, Salzman J Solid-State Electronics, 111, 238, 2015 |
| 6 |
Nature of the filament formed in HfO2-based resistive random access memory De Stefano F, Houssa M, Afanas'ev VV, Kittl JA, Jurczak M, Stesmans A Thin Solid Films, 533, 15, 2013 |
| 7 |
A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen Chowdhury M, Long B, Jha R, Devabhaktuni V Solid-State Electronics, 68, 1, 2012 |
| 8 |
Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films Mahne H, Berger L, Martin D, Klemm V, Slesazeck S, Jakschik S, Rafaja D, Mikolajick T Solid-State Electronics, 72, 73, 2012 |
| 9 |
Formation and disruption of current paths of anodic porous alumina films by conducting atomic force microscopy Oyoshi K, Nigo S, Inoue J, Sakai O, Kitazawa H, Kido G Applied Surface Science, 257(3), 837, 2010 |
| 10 |
High density 3D memory architecture based on the resistive switching effect Kuegeler C, Meier M, Rosezin R, Gilles S, Waser R Solid-State Electronics, 53(12), 1287, 2009 |