검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(100) heterostructure Seo T, Takahashi K, Sakuraba M, Murota J Solid-State Electronics, 53(8), 912, 2009 |
| 2 |
Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1-xGex/Si(100) heterostructure Seo T, Sakuraba M, Murota J Applied Surface Science, 254(19), 6265, 2008 |
| 3 |
Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si(1-x)Ge(x)/Si(100) heterostructure Seo T, Sakuraba M, Murota J Thin Solid Films, 517(1), 110, 2008 |
| 4 |
Resonant-tunneling-diode relaxation oscillator Chen CL, Mathews RH, Mahoney LJ, Calawa SD, Sage JP, Molvar KM, Parker CD, Maki PA Solid-State Electronics, 44(10), 1853, 2000 |