검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults Lutsenko EV, Rzheutski MV, Pavlovskii VN, Yablonskii GP, Alanzi M, Hamidalddin A, Alyamani A, Mauder C, Kalisch H, Reuters B, Heuken M, Vescan A, Naresh-Kumar G, Trager-Cowan C Journal of Crystal Growth, 434, 62, 2016 |
| 2 |
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates Reuters B, Strate J, Hahn H, Finken M, Wille A, Heuken M, Kalisch H, Vescan A Journal of Crystal Growth, 391, 33, 2014 |
| 3 |
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates Mauder C, Reuters B, Wang KR, Fahle D, Trampert A, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Chou MMC, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 315(1), 246, 2011 |
| 4 |
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates Mauder C, Reuters B, Khoshroo LR, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 312(11), 1823, 2010 |