| 1 |
Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov L
Journal of Crystal Growth, 293(2), 247, 2006 |
| 2 |
Structures GexSi1-x/Si(001) grown by low-temperature (300-400 degrees C) molecular beam epitaxy: Misfit dislocation propagation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov LV
Journal of Crystal Growth, 280(1-2), 309, 2005 |
| 3 |
Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 degrees C) temperature: specific features of plastic relaxation
Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Revenko MA, Sokolov LV
Thin Solid Films, 466(1-2), 69, 2004 |
| 4 |
InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
Putyato MA, Preobrazhenskii VV, Semyagin BR, Bolkhovityanov YB, Gilinsky AM, Gutakousky AK, Revenko MA, Pchelyakov OP, Feklin DF
Journal of Crystal Growth, 247(1-2), 23, 2003 |
| 5 |
Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation
Bolkhovityanov YB, Gutakovskii AK, Mashanov VI, Pchelyakov OP, Revenko MA, Sokolov LV
Thin Solid Films, 392(1), 98, 2001 |
| 6 |
Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As-4 flux
Kozhukhov AV, Revenko MA, Fedorov AA, Konarski P, Herman MA
Thin Solid Films, 306(2), 248, 1997 |
