검색결과 : 19건
No. | Article |
---|---|
1 |
Diodes of nanocrystalline SiC on n(-)/n(+)-type epitaxial crystalline 6H-SiC Zheng JD, Wei WS, Zhang CX, He MC, Li C Applied Surface Science, 435, 265, 2018 |
2 |
Accurate diode behavioral model with reverse recovery Banas S, Divin J, Dobes J, Panko V Solid-State Electronics, 139, 31, 2018 |
3 |
SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery Tong X, Liu SY, Sun WF, Yang LL, Xu ZY, Wu QX, Zhang XS, Wu JH, Yang Z, Li ZQ, Zhu YZ Solid-State Electronics, 148, 70, 2018 |
4 |
High-performance vertical Si PiN diode by hole remaining mechanism Tsukuda M, Baba A, Shiba Y, Omura I Solid-State Electronics, 129, 22, 2017 |
5 |
Analysis of the reverse recovery oscillation of superjunction MOSFET body diode Xue P, Fu GC Solid-State Electronics, 129, 81, 2017 |
6 |
Ultrafast lateral 600 V silicon SOI PiN diode with geometric traps for preventing waveform oscillation Tsukuda M, Imaki H, Omura I Solid-State Electronics, 104, 61, 2015 |
7 |
High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate Zhou Y, Wang D, Ahyi C, Tin CC, Williams J, Park M, Williams NM, Hanser A Solid-State Electronics, 50(11-12), 1744, 2006 |
8 |
Comparison of electrically and optically determined minority carrier lifetimes in 6H-SiC Reshanov SA, Pensl G Materials Science Forum, 483, 417, 2005 |
9 |
Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications Cova P, Menozzi R, Portesine M, Bianconi M, Gombia E, Mosca R Solid-State Electronics, 49(2), 183, 2005 |
10 |
Si/SiGe heterojunction collector for low loss operation of Trench IGBT Kudoh T, Asano T Applied Surface Science, 224(1-4), 399, 2004 |