화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Diodes of nanocrystalline SiC on n(-)/n(+)-type epitaxial crystalline 6H-SiC
Zheng JD, Wei WS, Zhang CX, He MC, Li C
Applied Surface Science, 435, 265, 2018
2 Accurate diode behavioral model with reverse recovery
Banas S, Divin J, Dobes J, Panko V
Solid-State Electronics, 139, 31, 2018
3 SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery
Tong X, Liu SY, Sun WF, Yang LL, Xu ZY, Wu QX, Zhang XS, Wu JH, Yang Z, Li ZQ, Zhu YZ
Solid-State Electronics, 148, 70, 2018
4 High-performance vertical Si PiN diode by hole remaining mechanism
Tsukuda M, Baba A, Shiba Y, Omura I
Solid-State Electronics, 129, 22, 2017
5 Analysis of the reverse recovery oscillation of superjunction MOSFET body diode
Xue P, Fu GC
Solid-State Electronics, 129, 81, 2017
6 Ultrafast lateral 600 V silicon SOI PiN diode with geometric traps for preventing waveform oscillation
Tsukuda M, Imaki H, Omura I
Solid-State Electronics, 104, 61, 2015
7 High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate
Zhou Y, Wang D, Ahyi C, Tin CC, Williams J, Park M, Williams NM, Hanser A
Solid-State Electronics, 50(11-12), 1744, 2006
8 Comparison of electrically and optically determined minority carrier lifetimes in 6H-SiC
Reshanov SA, Pensl G
Materials Science Forum, 483, 417, 2005
9 Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications
Cova P, Menozzi R, Portesine M, Bianconi M, Gombia E, Mosca R
Solid-State Electronics, 49(2), 183, 2005
10 Si/SiGe heterojunction collector for low loss operation of Trench IGBT
Kudoh T, Asano T
Applied Surface Science, 224(1-4), 399, 2004