검색결과 : 41건
| No. | Article |
|---|---|
| 1 |
Influence of quartz on silicon incorporation in HVPE grown AlN Fleischmann S, Richter E, Mogilatenko A, Weyers M, Trankle G Journal of Crystal Growth, 507, 295, 2019 |
| 2 |
Efficient iron doping of HVPE GaN Freitas JA, Culbertson JC, Glaser ER, Richter E, Weyers M, Oliveira AC, Garg VK Journal of Crystal Growth, 500, 111, 2018 |
| 3 |
A bacterium-based contact assay for evaluating the quality of solid samples Results from an international ring-test Marques CR, El-Azhari N, Martin-Laurent F, Pandard P, Meline C, Petre AL, Eckert S, Zipperle J, Vana M, Maly S, Sindelarova L, Amemori AS, Hofman J, Kumar A, Doan H, McLaughlin M, Richter E, Rombke J Journal of Hazardous Materials, 352, 139, 2018 |
| 4 |
MOVPE growth of violet GaN LEDs on beta-Ga2O3 substrates Li D, Hoffmann V, Richter E, Tessaro T, Galazka Z, Weyers M, Trankle G Journal of Crystal Growth, 478, 212, 2017 |
| 5 |
Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride Richter E, Gridneva E, Weyers M, Trankle G Journal of Crystal Growth, 456, 97, 2016 |
| 6 |
Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire Fleischmann S, Mogilatenko A, Hagedorn S, Richter E, Goran D, Schafer P, Zeimer U, Weyers M, Trankle G Journal of Crystal Growth, 414, 32, 2015 |
| 7 |
Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates Cho E, Mogilatenko A, Brunner F, Richter E, Weyers M Journal of Crystal Growth, 371, 45, 2013 |
| 8 |
Growth of GaN boules via vertical HVPE Richter E, Grunder M, Netzel C, Weyers M, Trankle G Journal of Crystal Growth, 350(1), 89, 2012 |
| 9 |
HVPE of AlxGa1-xN layers on planar and trench patterned sapphire Hagedorn S, Richter E, Zeimer U, Prasai D, John W, Weyers M Journal of Crystal Growth, 353(1), 129, 2012 |
| 10 |
Hydride vapor phase epitaxy of GaN boules using high growth rates Richter E, Zeimer U, Hagedorn S, Wagner M, Brunner F, Weyers M, Trankle G Journal of Crystal Growth, 312(18), 2537, 2010 |