검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology Mohamad B, Leroux C, Rideau D, Haond M, Reimbold G, Ghibaudo G Solid-State Electronics, 128, 10, 2017 |
| 2 |
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements Kriso C, Triozon F, Delerue C, Schneider L, Abbate F, Nolot E, Rideau D, Niquet YM, Mugny G, Tavernier C Solid-State Electronics, 129, 93, 2017 |
| 3 |
Unexpected impact of germanium content in SiGe bulk PMOSFETs Diouf C, Cros A, Soussou A, Rideau D, Haendler S, Rosa J, Ghibaudo G Solid-State Electronics, 86, 45, 2013 |
| 4 |
Surface potential compact model for embedded flash devices oriented to IC memory design Garetto D, Rideau D, Gilibert F, Schmid A, Jaouen H, Leblebici Y Solid-State Electronics, 88, 73, 2013 |
| 5 |
Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model Garetto D, Randriamihaja YM, Zaka A, Rideau D, Schmid A, Jaouen H, Leblebici Y Solid-State Electronics, 71, 74, 2012 |
| 6 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time Ramirez-Garcia E, Michaillat M, Aniel F, Zerounian N, Enciso-Aguilar M, Rideau D Solid-State Electronics, 61(1), 58, 2011 |
| 7 |
Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects Zaka A, Singer J, Dornel E, Garetto D, Rideau D, Rafhay Q, Clerc R, Manceau JP, Degors N, Boccaccio C, Tavernier C, Jaouen H Solid-State Electronics, 63(1), 158, 2011 |
| 8 |
On the accuracy of current TCAD hot carrier injection models in nanoscale devices Zaka A, Rafhay Q, Iellina M, Palestri P, Clerc R, Rideau D, Garetto D, Dornel E, Singer J, Pananakakis G, Tavernier C, Jaouen H Solid-State Electronics, 54(12), 1669, 2010 |
| 9 |
Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys Michaillat M, Rideau D, Aniel F, Tavernier C, Jaouen H Thin Solid Films, 518(9), 2437, 2010 |
| 10 |
On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Rideau D, Feraille M, Michaillat M, Niquet YM, Tavernier C, Jaouen H Solid-State Electronics, 53(4), 452, 2009 |