화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy
Cho YJ, Sadofev S, Fernandez-Garrido S, Calarco R, Riechert H, Qalazka Z, Uecker R, Brandt O
Applied Surface Science, 369, 159, 2016
2 The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy
Schumann T, Lopes JMJ, Wofford JM, Oliveira MH, Dubslaff M, Hanke M, Jahn U, Geelhaar L, Riechert H
Journal of Crystal Growth, 425, 274, 2015
3 Growth control of epitaxial GeTe-Sb2Te3 films using a line-of-sight quadrupole mass spectrometer
Perumal K, Braun W, Riechert H, Calarco R
Journal of Crystal Growth, 396, 50, 2014
4 Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)
Jenichen B, Herfort J, Jahn U, Trampert A, Riechert H
Thin Solid Films, 556, 120, 2014
5 Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys
Puttisong Y, Buyanova IA, Ptak AJ, Tu CW, Geelhaar L, Riechert H, Chen WMM
Advanced Materials, 25(5), 738, 2013
6 Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy
Kamimura J, Bogdanoff P, Lahnemann J, Hauswald C, Geelhaar L, Fiechter S, Riechert H
Journal of the American Chemical Society, 135(28), 10242, 2013
7 Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate
Drechsel P, Riechert H
Journal of Crystal Growth, 315(1), 211, 2011
8 Rare-earth oxide superlattices on Si(111)
Grosse F, Bokoch S, Behnke S, Proessdorf A, Niehle M, Trampert A, Braun W, Riechert H
Journal of Crystal Growth, 323(1), 95, 2011
9 Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy
Hilse M, Takagaki Y, Ramsteiner M, Herfort J, Breuer S, Geelhaar L, Riechert H
Journal of Crystal Growth, 323(1), 307, 2011
10 Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison
Breuer S, Hilse M, Geelhaar L, Riechert H
Journal of Crystal Growth, 323(1), 311, 2011