화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Aptamer-field-effect transistors overcome Debye length limitations for small-molecule sensing
Nakatsuka N, Yang KA, Abendroth JM, Cheung KM, Xu XB, Yang HY, Zhao CZ, Zhu BW, Rim YS, Yang Y, Weiss PS, Stojanovic MN, Andrews AM
Science, 362(6412), 319, 2018
2 Single Crystal Formamidinium Lead Iodide (FAPbI(3)): Insight into the Structural, Optical, and Electrical Properties
Han QF, Bae SH, Sun PY, Hsieh YT, Yang Y, Rim YS, Zhao HX, Chen Q, Shi WZ, Li G, Yang Y
Advanced Materials, 28(11), 2253, 2016
3 Recent Progress in Materials and Devices toward Printable and Flexible Sensors
Rim YS, Bae SH, Chen HJ, De Marco N, Yang Y
Advanced Materials, 28(22), 4415, 2016
4 Deep-level defect distribution as a function of oxygen partial pressure in sputtered ZnO thin-film transistors
Park J, Rim YS, Li C, Kim HS, Goorsky M, Streit D
Current Applied Physics, 16(10), 1369, 2016
5 Ultrahigh and Broad Spectral Photodetectivity of an Organic-Inorganic Hybrid Phototransistor for Flexible Electronics
Rim YS, Yang Y, Bae SH, Chen HJ, Li C, Goorsky MS, Yang Y
Advanced Materials, 27(43), 6885, 2015
6 Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways
Rim YS, Chen HJ, Kou XL, Duan HS, Zhou HP, Cai M, Kim HJ, Yang Y
Advanced Materials, 26(25), 4273, 2014
7 Combined effect of the large ionic radius and low electronegativity of lanthanum additive on solution-processed zinc-tin-oxide thin-film transistors
Kim CH, Rim YS, Kim DL, Kim HJ
Thin Solid Films, 536, 291, 2013
8 Improved Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors by Zr Addition
Rim YS, Kim DL, Jeong WH, Kim HJ
Electrochemical and Solid State Letters, 15(2), H37, 2012
9 Carrier-Suppressing Effect of Mg in Solution-Processed Zn-Sn-O Thin-Film Transistors
Lim HS, Rim YS, Kim DL, Jeong WH, Kim HJ
Electrochemical and Solid State Letters, 15(3), H78, 2012
10 Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors
Rim YS, Kim DL, Jeong WH, Kim SJ, Kim BS, Kim HJ
Current Applied Physics, 11(1), S258, 2011