1 |
Aptamer-field-effect transistors overcome Debye length limitations for small-molecule sensing Nakatsuka N, Yang KA, Abendroth JM, Cheung KM, Xu XB, Yang HY, Zhao CZ, Zhu BW, Rim YS, Yang Y, Weiss PS, Stojanovic MN, Andrews AM Science, 362(6412), 319, 2018 |
2 |
Single Crystal Formamidinium Lead Iodide (FAPbI(3)): Insight into the Structural, Optical, and Electrical Properties Han QF, Bae SH, Sun PY, Hsieh YT, Yang Y, Rim YS, Zhao HX, Chen Q, Shi WZ, Li G, Yang Y Advanced Materials, 28(11), 2253, 2016 |
3 |
Recent Progress in Materials and Devices toward Printable and Flexible Sensors Rim YS, Bae SH, Chen HJ, De Marco N, Yang Y Advanced Materials, 28(22), 4415, 2016 |
4 |
Deep-level defect distribution as a function of oxygen partial pressure in sputtered ZnO thin-film transistors Park J, Rim YS, Li C, Kim HS, Goorsky M, Streit D Current Applied Physics, 16(10), 1369, 2016 |
5 |
Ultrahigh and Broad Spectral Photodetectivity of an Organic-Inorganic Hybrid Phototransistor for Flexible Electronics Rim YS, Yang Y, Bae SH, Chen HJ, Li C, Goorsky MS, Yang Y Advanced Materials, 27(43), 6885, 2015 |
6 |
Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways Rim YS, Chen HJ, Kou XL, Duan HS, Zhou HP, Cai M, Kim HJ, Yang Y Advanced Materials, 26(25), 4273, 2014 |
7 |
Combined effect of the large ionic radius and low electronegativity of lanthanum additive on solution-processed zinc-tin-oxide thin-film transistors Kim CH, Rim YS, Kim DL, Kim HJ Thin Solid Films, 536, 291, 2013 |
8 |
Improved Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors by Zr Addition Rim YS, Kim DL, Jeong WH, Kim HJ Electrochemical and Solid State Letters, 15(2), H37, 2012 |
9 |
Carrier-Suppressing Effect of Mg in Solution-Processed Zn-Sn-O Thin-Film Transistors Lim HS, Rim YS, Kim DL, Jeong WH, Kim HJ Electrochemical and Solid State Letters, 15(3), H78, 2012 |
10 |
Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors Rim YS, Kim DL, Jeong WH, Kim SJ, Kim BS, Kim HJ Current Applied Physics, 11(1), S258, 2011 |