검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Crystallization of Nanometer Ge2Sb2Te5 Amorphous Regions Embedded in the Hexagonal Close Packed Structure Mio AM, D'Arrigo G, Carria E, Bongiorno C, Rossini S, Spinella C, Grimaldi MG, Rimini E Electrochemical and Solid State Letters, 15(4), H105, 2012 |
| 2 |
Amorphous-Crystal Phase Transitions in GexTe1-x Alloys Carria E, Mio AM, Gibilisco S, Miritello M, Bongiorno C, Grimaldi MG, Rimini E Journal of the Electrochemical Society, 159(2), H130, 2012 |
| 3 |
Ag-Assisted Chemical Etching of (100) and (111) n-Type Silicon Substrates by Varying the Amount of Deposited Metal Milazzo RG, D'Arrigo G, Spinella C, Grimaldi MG, Rimini E Journal of the Electrochemical Society, 159(9), D521, 2012 |
| 4 |
Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation Carria E, Mio AM, Gibilisco S, Miritello M, Grimaldi MG, Rimini E Electrochemical and Solid State Letters, 14(3), H124, 2011 |
| 5 |
Polymorphism of Amorphous Ge2Sb2Te5 Probed by EXAFS and Raman Spectroscopy Carria E, Mio AM, Gibilisco S, Miritello M, d'Acapito F, Grimaldi MG, Rimini E Electrochemical and Solid State Letters, 14(12), H480, 2011 |
| 6 |
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films Carria E, Mio AM, Miritello M, Gibilisco S, De Bastiani R, Pennisi AR, Bongiorno C, Grimaldi MG, Rimini E Electrochemical and Solid State Letters, 13(9), II317, 2010 |
| 7 |
Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide Sonde S, Giannazzo F, Raineri V, Rimini E Journal of Vacuum Science & Technology B, 27(2), 868, 2009 |
| 8 |
Effect of a Ti cap layer on the diffusion of Co atoms during CoSi2 reaction Alberti A, Fronterre R, La Via F, Rimini E Electrochemical and Solid State Letters, 8(2), G47, 2005 |
| 9 |
Characterization of embedded rhomboidal microchannels formation on silicon (100) surface D'Arrigo G, Spinella C, Rimini E, Rubino L, Lorenti S Journal of the Electrochemical Society, 151(8), C523, 2004 |
| 10 |
Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy Re M, Scalese S, Mirabella S, Terrasi A, Priolo F, Rimini E, Berti M, Coati A, Drigo A, Carnera A, De Salvador D, Spinella C, La Mantia A Journal of Crystal Growth, 227, 749, 2001 |