검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Off-grid solar thermal water heating system using phase-change materials: design, integration and real environment investigation Prakash J, Roan D, Tauqir W, Nazir H, Ali M, Kannan A Applied Energy, 240, 73, 2019 |
| 2 |
Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics Triyoso DH, Hegde RI, Schaeffer JK, Gregory R, Wang XD, Canonico M, Roan D, Hebert EA, Kim K, Jiang J, Rai R, Kaushik V, Samavedam SB, Rochat N Journal of Vacuum Science & Technology B, 25(3), 845, 2007 |
| 3 |
Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD Triyoso DH, Ramon M, Hegde RI, Roan D, Garcia R, Baker J, Wang XD, Fejes P, White BE, Tobin PJ Journal of the Electrochemical Society, 152(3), G203, 2005 |
| 4 |
Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition Triyoso DH, Hegde RI, Grant JM, Schaeffer JK, Roan D, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 23(1), 288, 2005 |
| 5 |
Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2 Triyoso D, Liu R, Roan D, Ramon M, Edwards NV, Gregory R, Werho D, Kulik J, Tam G, Irwin E, Wang XD, La LB, Hobbs C, Garcia R, Baker J, White BE, Tobin P Journal of the Electrochemical Society, 151(10), F220, 2004 |
| 6 |
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments Triyoso DH, Hegde RI, Grant J, Fejes P, Liu R, Roan D, Ramon M, Werho D, Rai R, La LB, Baker J, Garza C, Guenther T, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 22(4), 2121, 2004 |
| 7 |
HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium Schaeffer J, Edwards NV, Liu R, Roan D, Hradsky B, Gregory R, Kulik J, Duda E, Contreras L, Christiansen J, Zollner S, Tobin P, Nguyen BY, Nieh R, Ramon M, Rao R, Hegde R, Rai R, Baker J, Voight S Journal of the Electrochemical Society, 150(4), F67, 2003 |
| 8 |
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics Schaeffer JK, Samavedam SB, Gilmer DC, Dhandapani V, Tobin PJ, Mogab J, Nguyen BY, White BE, Dakshina-Murthy S, Rai RS, Jiang ZX, Martin R, Raymond MV, Zavala M, La LB, Smith JA, Garcia R, Roan D, Kottke M, Gregory RB Journal of Vacuum Science & Technology B, 21(1), 11, 2003 |