검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J Solid-State Electronics, 64(1), 47, 2011 |
| 2 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |
| 3 |
Ballistic nano-devices for high frequency applications Bollaert S, Cappy A, Roelens Y, Galloo JS, Gardes C, Teukam Z, Wallart X, Mateos J, Gonzalez T, Vasallo BG, Hackens B, Berdnarz L, Huynen I Thin Solid Films, 515(10), 4321, 2007 |