검색결과 : 8건
No. | Article |
---|---|
1 |
Al2O3-SiO2 stack with enhanced reliability Lisiansky M, Fenigstein A, Heiman A, Raskin Y, Roizin Y, Bartholomew L, Owyang J, Gladkikh A, Brener R, Geppert I, Lyakin E, Meyler B, Shnieder Y, Yofis S, Eizenberg M Journal of Vacuum Science & Technology B, 27(1), 476, 2009 |
2 |
Chemical bonding and interdiffusion in scaled down SiO2/Si3N4/SiO2 stacks with top oxide formed by thermal ed copyoxidation Saraf M, Edrei R, Akhvlediani R, Roizin Y, Shima-Edelstein R, Hoffman A Journal of Vacuum Science & Technology B, 24(4), 1716, 2006 |
3 |
Nitrogen diffusion and accumulation at the Si/SiO2 interface in SiO2/Si3N4/SiO2 structures for nonvolatile semiconductor memories Saraf M, Edrei R, Shima-Edelstein R, Roizin Y, Hoffman A Journal of Vacuum Science & Technology B, 23(4), 1558, 2005 |
4 |
Profiling of deep traps in silicon oxide-nitride-oxide structures Naich M, Rosenman G, Roizin Y Thin Solid Films, 471(1-2), 166, 2005 |
5 |
Structure, chemistry, and electrical performance of silicon oxide-nitride-oxide stacks on silicon Levin I, Kovler M, Roizin Y, Vofsi M, Leapman RD, Goodman G, Kawada N, Funahashi M Journal of the Electrochemical Society, 151(12), G833, 2004 |
6 |
Evolution of surface topography of as-grown Si films near amorphous-to-polycrystalline transition Edrei R, Shima R, Gridin VV, Roizin Y, Kaplan WD, Hoffman A Journal of the Electrochemical Society, 151(12), G904, 2004 |
7 |
Exoelectron emission studies of trap spectrum in ultrathin amorphous Si3N4 films Naich M, Rosenman G, Roizin Y, Molotskii M Solid-State Electronics, 48(3), 477, 2004 |
8 |
The effect of deposition process parameters and post-deposition treatments on the poly- and amorphous-silicon morphology Edrei R, Shauly EN, Roizin Y, Hoffman A Applied Surface Science, 188(3-4), 539, 2002 |