화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Al2O3-SiO2 stack with enhanced reliability
Lisiansky M, Fenigstein A, Heiman A, Raskin Y, Roizin Y, Bartholomew L, Owyang J, Gladkikh A, Brener R, Geppert I, Lyakin E, Meyler B, Shnieder Y, Yofis S, Eizenberg M
Journal of Vacuum Science & Technology B, 27(1), 476, 2009
2 Chemical bonding and interdiffusion in scaled down SiO2/Si3N4/SiO2 stacks with top oxide formed by thermal ed copyoxidation
Saraf M, Edrei R, Akhvlediani R, Roizin Y, Shima-Edelstein R, Hoffman A
Journal of Vacuum Science & Technology B, 24(4), 1716, 2006
3 Nitrogen diffusion and accumulation at the Si/SiO2 interface in SiO2/Si3N4/SiO2 structures for nonvolatile semiconductor memories
Saraf M, Edrei R, Shima-Edelstein R, Roizin Y, Hoffman A
Journal of Vacuum Science & Technology B, 23(4), 1558, 2005
4 Profiling of deep traps in silicon oxide-nitride-oxide structures
Naich M, Rosenman G, Roizin Y
Thin Solid Films, 471(1-2), 166, 2005
5 Structure, chemistry, and electrical performance of silicon oxide-nitride-oxide stacks on silicon
Levin I, Kovler M, Roizin Y, Vofsi M, Leapman RD, Goodman G, Kawada N, Funahashi M
Journal of the Electrochemical Society, 151(12), G833, 2004
6 Evolution of surface topography of as-grown Si films near amorphous-to-polycrystalline transition
Edrei R, Shima R, Gridin VV, Roizin Y, Kaplan WD, Hoffman A
Journal of the Electrochemical Society, 151(12), G904, 2004
7 Exoelectron emission studies of trap spectrum in ultrathin amorphous Si3N4 films
Naich M, Rosenman G, Roizin Y, Molotskii M
Solid-State Electronics, 48(3), 477, 2004
8 The effect of deposition process parameters and post-deposition treatments on the poly- and amorphous-silicon morphology
Edrei R, Shauly EN, Roizin Y, Hoffman A
Applied Surface Science, 188(3-4), 539, 2002