화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T
Thin Solid Films, 645, 5, 2018
2 Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model
Pelloux-Prayer J, Casse M, Triozon F, Barraud S, Niquet YM, Rouviere JL, Faynot O, Reimbold G
Solid-State Electronics, 125, 175, 2016
3 Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (001) substrates
Poydenot V, Dujardin R, Fournel F, Rouviere JL, Barski A
Journal of Crystal Growth, 278(1-4), 83, 2005
4 Growth of n-face polarity III-nitride heterostructures on C-face 4H-SiC by plasma-assisted MBE
Monroy E, Sarigiannidou E, Fossard F, Enjalbert F, Gogneau N, Bellet-Amalric E, Brault J, Rouviere JL, Dang LS, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1573, 2004
5 Nanostructures formation and optical properties of II-VI semiconductor compounds
Mariette H, Marsal L, Besombes L, Tinjod F, Gilles B, Kheng K, Rouviere JL
Journal of Crystal Growth, 237, 227, 2002
6 Recent advances in defect-selective etching of GaN
Weyher JL, Brown PD, Rouviere JL, Wosinski T, Zauner ARA, Grzegory I
Journal of Crystal Growth, 210(1-3), 151, 2000
7 Nanometric patterning with ultrathin twist bonded silicon wafers
Fournel F, Moriceau H, Magnea N, Eymery J, Buttard D, Rouviere JL, Rousseau K, Aspar B
Thin Solid Films, 380(1-2), 10, 2000