| 1 |
A comparison between interfacial electron-transfer rate constants at metallic and graphite electrodes
Royea WJ, Hamann TW, Brunschwig BS, Lewis NS
Journal of Physical Chemistry B, 110(39), 19433, 2006 |
| 2 |
Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts
Gstrein F, Michalak DJ, Royea WJ, Lewis NS
Journal of Physical Chemistry B, 106(11), 2950, 2002 |
| 3 |
Reactions of etched, single crystal (111)B-oriented InP to produce functionalized surfaces with low electrical defect densities
Sturzenegger M, Prokopuk N, Kenyon CN, Royea WJ, Lewis NS
Journal of Physical Chemistry B, 103(49), 10838, 1999 |
| 4 |
Fermi golden rule approach to evaluating outer-sphere electron-transfer rate constants at semiconductor/liquid interfaces (vol 101, pg 11152, 1997)
Royea WJ, Fajardo AM, Lewis NS
Journal of Physical Chemistry B, 102(18), 3653, 1998 |
| 5 |
Frumkin corrections for heterogeneous rate constants at semiconducting electrodes
Royea WJ, Kruger O, Lewis NS
Journal of Electroanalytical Chemistry, 438(1-2), 191, 1997 |
| 6 |
Fermi golden rule approach to evaluating outer-sphere electron-transfer rate constants at semiconductor/liquid interfaces
Royea WJ, Fajardo AM, Lewis NS
Journal of Physical Chemistry B, 101(51), 11152, 1997 |
