화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18 mu m CMOS process
Martin P, Royet AS, Guellec F, Ghibaudo G
Solid-State Electronics, 62(1), 115, 2011
2 Noise behavior of 4H-SiC MESFETs at low drain voltage
Banc C, Royet AS, Ouisse T, Bano E, Noblanc O, Brylinski C
Materials Science Forum, 353-356, 703, 2001
3 Properties of transmission lines on various SiC substrates
Royet AS, Cabon B, Ouisse T, Billon T
Materials Science Forum, 338-3, 1267, 2000