검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Phosphorous passivation of the SiO2/4H-SiC interface Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR Solid-State Electronics, 68, 103, 2012 |
| 2 |
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices Zhu XG, Ahyi AC, Li MY, Chen ZJ, Rozen J, Feldman LC, Williams JR Solid-State Electronics, 57(1), 76, 2011 |