검색결과 : 10건
No. | Article |
---|---|
1 |
A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations Donetti L, Sampedro C, Ruiz FG, Godoy A, Gamiz F Solid-State Electronics, 159, 19, 2019 |
2 |
Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs Donetti L, Sampedro C, Ruiz FG, Godoy A, Gamiz F Solid-State Electronics, 143, 49, 2018 |
3 |
A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners Moreno E, Villada MP, Ruiz FG, Roldan JB, Marin EG Solid-State Electronics, 111, 180, 2015 |
4 |
Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors Gonzalez-Medina JM, Ruiz FG, Marin EG, Godoy A, Gamiz F Solid-State Electronics, 114, 30, 2015 |
5 |
Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects Marin EG, Ruiz FG, Tienda-Luna IM, Godoy A, Gamiz F Solid-State Electronics, 92, 28, 2014 |
6 |
An analytical mobility model for square Gate-All-Around MOSFETs Tienda-Luna IM, Roldan JB, Ruiz FG, Blanque CM, Gamiz F Solid-State Electronics, 90, 18, 2013 |
7 |
Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs Ruiz FG, Tienda-Luna IM, Godoy A, Sampedro C, Gamiz F, Donetti L Solid-State Electronics, 59(1), 62, 2011 |
8 |
Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Ruiz FG Solid-State Electronics, 54(2), 131, 2010 |
9 |
An analytical model for square GAA MOSFETs including quantum effects Moreno E, Roldan JB, Ruiz FG, Barrera D, Godoy A, Gamiz F Solid-State Electronics, 54(11), 1463, 2010 |
10 |
Phonon scattering in Si-based nanodevices Donetti L, Gamiz F, Rodriguez N, Ruiz FG Solid-State Electronics, 51(4), 593, 2007 |