검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors Fobelets K, Rumyantsev SL, Hackbarth T, Shur MS Solid-State Electronics, 53(6), 626, 2009 |
| 2 |
Degradation of AlGaN-based ultraviolet light emitting diodes Sawyer S, Rumyantsev SL, Shur MS Solid-State Electronics, 52(6), 968, 2008 |
| 3 |
Dynamic performance of 3.1 kV 4H-SiC asymmetrical GTO thyristors Agarwal AK, Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL Materials Science Forum, 389-3, 1349, 2002 |
| 4 |
Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs Ivanov PA, Levinshtein ME, Rumyantsev SL, Ryu SH, Agarwal AK, Palmour JW Solid-State Electronics, 46(4), 567, 2002 |
| 5 |
Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Khan MA, Simin G, Yang J Solid-State Electronics, 46(5), 711, 2002 |
| 6 |
Turn-off performance of a 2.6 kV 4H-SiC asymmetrical GTO thyristor Agarwal AK, Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL, Ryu SH, Shur MS Materials Science Forum, 353-356, 743, 2001 |
| 7 |
Temperature dependence of turn-on processes in 4H-SiC thyristors Levinshtein ME, Mnatsakanov TT, Ivanov PA, Agarwal AK, Palmour JW, Rumyantsev SL, Tandoev AG, Yurkov SN Solid-State Electronics, 45(3), 453, 2001 |
| 8 |
Steady-state and transient forward current-voltage characteristics of 5.5 kV 4H-silicon carbide diodes at high and superhigh current densities Dyakonova NV, Ivanov PA, Kozlov VA, Levinshtein ME, Palmour JW, Rumyantsev SL, Singh R Materials Science Forum, 338-3, 1319, 2000 |
| 9 |
Low frequency noise in n-GaN with high electron mobility Rumyantsev SL, Look DC, Levinshtein ME, Khan MA, Simin G, Adivarahan V, Molnar RJ, Shur MS Materials Science Forum, 338-3, 1603, 2000 |
| 10 |
Turn-off operation of a MOS-gate 2.6 kV 4H-SiC gate turn-off thyristor Ivanov PA, Levinshtein ME, Rumyantsev SL, Agarwal AK, Palmour JW Solid-State Electronics, 44(12), 2155, 2000 |