검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm Valdueza-Felip S, Ajay A, Redaelli L, Chauvat MP, Ruterana P, Cremel T, Jimenez-Rodriguez M, Kheng K, Monroy E Solar Energy Materials and Solar Cells, 160, 355, 2017 |
| 2 |
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers Skuridina D, Dinh DV, Pristovsek M, Lacroix B, Chauvat MP, Ruterana P, Kneissl M, Vogt P Applied Surface Science, 307, 461, 2014 |
| 3 |
An efficient photoanode consisting of TiO2 nanoparticle-filled TiO2 nanotube arrays for dye sensitized solar cells Zhang J, Li QT, Li SQ, Wang Y, Ye C, Ruterana P, Wang H Journal of Power Sources, 268, 941, 2014 |
| 4 |
Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE Cho YS, Hardtdegen H, Kaluza N, von der Ahe M, Breuer U, Bochem HP, Ruterana P, Schmalbuch K, Wenzel D, Schapers T, Beschoten B, Grutzmacher D, Luth H Journal of Crystal Growth, 312(1), 1, 2009 |
| 5 |
Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation Lei BL, Yu GH, Ye HH, Meng S, Wang XZ, Lin C, Qi M, Li A, Nouet G, Ruterana P, Chen J Thin Solid Films, 516(12), 3772, 2008 |
| 6 |
Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes Detalle M, Wang G, Remiens D, Ruterana P, Roussel P, Dkhil B Journal of Crystal Growth, 305(1), 137, 2007 |
| 7 |
Fabrication and characterisation of CuInSe2/Si(100) thin films by the stacked elemental layer (SEL) technique Bechiri L, Benabdeslem M, Benslim N, Djekoun A, Otmani A, Mahdjoubi L, Madelon R, Ruterana P, Nouet G Catalysis Today, 113(3-4), 226, 2006 |
| 8 |
Effect of ultra-thin buffer on the structure of highly mismatched epitaxial ZnO during sputter growth Kim IW, Kim HS, Kwon YB, Doh SJ, Kim CC, Je JH, Ruterana P, Nouet G Applied Surface Science, 241(1-2), 261, 2005 |
| 9 |
On the origin of a-type threading dislocations in GaN layers Kwon YB, Je JH, Ruterana P, Nouet G Journal of Vacuum Science & Technology A, 23(6), 1588, 2005 |
| 10 |
First-principles calculations on the electronic structure of TiCxN1-x, ZrxNb1-xC and HfCxN1-x alloys Zaoui A, Bouhafs B, Ruterana P Materials Chemistry and Physics, 91(1), 108, 2005 |