검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Hall scattering factor and electron mobility of 4H SiC: Measurements and numerical simulation Rutsch G, Devaty RP, Choyke WJ, Langer DW, Rowland LB, Niemann E, Wischmeyer F Materials Science Forum, 338-3, 733, 2000 |
| 2 |
A comparison of single- and multi-layer ohmic contacts based on tantalum carbide on n-type and osmium on p-type silicon carbide at elevated temperatures Jang T, Rutsch G, Odekirk B, Porter LM Materials Science Forum, 338-3, 1001, 2000 |