검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Measurement of effective carrier lifetime at the semiconductor-dielectric interface by Photoconductive Decay (PCD) Method Drummond PJ, Bhatia D, Ruzyllo J Solid-State Electronics, 81, 130, 2013 |
| 2 |
Characterization of near-surface electrical properties of multi-crystalline silicon wafers Drummond P, Kshirsagar A, Ruzyllo J Solid-State Electronics, 55(1), 29, 2011 |
| 3 |
Studies of photoconductance decay method for characterization of near-surface electrical properties of semiconductors Drummond PJ, Bhatia D, Kshirsagar A, Ramani S, Ruzyllo J Thin Solid Films, 519(22), 7621, 2011 |
| 4 |
Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications Chang K, Shanmugasundaram K, Shallenberger J, Ruzyllo J Thin Solid Films, 515(7-8), 3802, 2007 |
| 5 |
Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics Chang KW, Chang FM, Ruzyllo J Solid-State Electronics, 50(9-10), 1670, 2006 |
| 6 |
Surface charge evolution during early stage of thermal oxidation of silicon Wang JB, Roman P, Kamieniecki E, Ruzyllo J Electrochemical and Solid State Letters, 6(5), G63, 2003 |
| 7 |
Control of organic contamination of silicon surfaces using white light illumination in ambient air Tsai CL, Roman P, Wu CT, Pantano C, Berry J, Kamieniecki E, Ruzyllo J Journal of the Electrochemical Society, 150(1), G39, 2003 |
| 8 |
Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition Suliman SA, Venkataraman B, Wu CT, Ridley RS, Dolny GM, Awadelkarim OO, Fonash SJ, Ruzyllo J Solid-State Electronics, 47(5), 899, 2003 |
| 9 |
Mist deposited high-k dielectrics for next generation MOS gates Lee DO, Roman P, Wu CT, Mumbauer P, Brubaker M, Grant R, Ruzyllo J Solid-State Electronics, 46(11), 1671, 2002 |
| 10 |
On the capacitance of metal/high-k dielectric material stack/silicon structures Jiang J, Awadelkarim OO, Lee DO, Roman P, Ruzyllo J Solid-State Electronics, 46(11), 1991, 2002 |