| 1 |
Improving performance of device made up of CuO nanoparticles synthesized by hydrothermal over the reflux method
Jana R, Dey A, Das M, Datta J, Das P, Ray PP
Applied Surface Science, 452, 155, 2018 |
| 2 |
Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond
Zhao D, Liu ZC, Wang J, Liang Y, Nauman M, Fu J, Wang YF, Fan SW, Wang W, Wang HX
Applied Surface Science, 457, 411, 2018 |
| 3 |
A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme
Kim DY, Seok O, Park H, Bahng W, Kim HW, Park KC
Solid-State Electronics, 140, 8, 2018 |
| 4 |
Integrated batch reactive distillation column configurations for optimal synthesis of methyl lactate
Aqar DY, Rahmanian N, Mujtaba IM
Chemical Engineering and Processing, 108, 197, 2016 |
| 5 |
Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes
Yuan H, Tang XY, Song QW, Zhang YM, Zhang YM, Yang F, Niu YX
Solid-State Electronics, 103, 83, 2015 |
| 6 |
Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrates
Ha MW, Han MK, Hahn CK
Solid-State Electronics, 81, 1, 2013 |
| 7 |
Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode
Ha MW, Lee JH, Han MK, Hahn CK
Solid-State Electronics, 73, 1, 2012 |
| 8 |
Passivation of 4H-SiC Schottky barrier diodes using aluminum based dielectrics
Kumta A, Rusli, Xia JH
Solid-State Electronics, 53(2), 204, 2009 |
| 9 |
Determination of optimal insulator thickness for MISiC hydrogen sensors
Xu JP, Lai PT, Han B, Tang WM
Solid-State Electronics, 48(9), 1673, 2004 |
| 10 |
Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors
Wu HH, Chang RS, Horng GH
Thin Solid Films, 466(1-2), 314, 2004 |
