| 1 |
Selective area growth of InAs nanowires from SiO2/Si(111) templates direct-written by focused helium ion beam technology
Yang CW, Chen WC, Chou C, Lin HH
Journal of Crystal Growth, 484, 56, 2018 |
| 2 |
Site-controlled growth of GaN nanorod arrays by magnetron sputter epitaxy
Serban EA, Palisaitis J, Persson POA, Hultman L, Birch J, Hsiao CL
Thin Solid Films, 660, 950, 2018 |
| 3 |
Site-controlled crystalline InN growth from the V-pits of a GaN substrate
Kuo CT, Hsu LH, Lai YY, Cheng SY, Kuo HC, Lin CC, Cheng YJ
Applied Surface Science, 405, 449, 2017 |
| 4 |
Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates
Wang XY, Yang WY, Wang BJ, Ji XH, Xu SY, Wang W, Chen Q, Yang T
Journal of Crystal Growth, 460, 1, 2017 |
| 5 |
Measurement of 3-dimensional dopant distribution in InGaAs microdiscs grown selectively on Si (111)
Watanabe T, Takeuchi M, Nakano Y, Sugiyama M
Journal of Crystal Growth, 464, 33, 2017 |
| 6 |
Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications
Le BH, Zhao SR, Liu XH, Woo SY, Botton GA, Mi ZT
Advanced Materials, 28(38), 8446, 2016 |
| 7 |
Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE
Lekhal K, Bae SY, Lee HJ, Mitsunari T, Tamura A, Deki M, Honda Y, Amano H
Journal of Crystal Growth, 447, 55, 2016 |
| 8 |
Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers
Wu CH, Lee PY, Chen KY, Tseng YT, Wang YL, Cheng KY
Journal of Crystal Growth, 454, 71, 2016 |
| 9 |
Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy
Wu ZL, Chen P, Yang GF, Xu Z, Xu F, Jiang FL, Zhang R, Zheng YD
Applied Surface Science, 331, 444, 2015 |
| 10 |
Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates
Terziyska PT, Butcher KSA, Rafailov P, Alexandrov D
Applied Surface Science, 353, 103, 2015 |
