검색결과 : 2건
No. | Article |
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1 |
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Rodriguez N, Tienda-Luna IM, Martinez-Carricondo F, Biel B Solid-State Electronics, 65-66, 88, 2011 |
2 |
Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs Schenk A Solid-State Electronics, 54(2), 115, 2010 |