화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Rodriguez N, Tienda-Luna IM, Martinez-Carricondo F, Biel B
Solid-State Electronics, 65-66, 88, 2011
2 Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs
Schenk A
Solid-State Electronics, 54(2), 115, 2010