화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture
Chan TK, Koh SY, Fang V, Markwitz A, Osipowicz T
Applied Surface Science, 314, 322, 2014
2 C-V profiling of ultra-shallow junctions using step-like background profiles
Popadic M, Milovanovic V, Xu CQ, Sarubbi F, Nanver LK
Solid-State Electronics, 54(9), 890, 2010
3 Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)
Vervisch V, Larmande Y, Delaporte P, Sarnet T, Sentis M, Etienne H, Torregrosa F, Cristiano F, Fazzini PF
Applied Surface Science, 255(10), 5647, 2009
4 Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants
Giubertoni D, Bersani A, Barozzi M, Pederzoli S, Iacob E, van den Berg JA, Werner M
Applied Surface Science, 252(19), 7214, 2006
5 Boron ultra low energy SIMS depth profiling improved by rotating stage
Bersani M, Giubertoni D, Iacob E, Barozzi M, Pederzoli S, Vanzetti L, Anderle M
Applied Surface Science, 252(19), 7315, 2006
6 A novel 50 nm vertical MOSFET with a dielectric pocket
Jayanarayanan SK, Dey S, Donnelly JP, Banerjee SK
Solid-State Electronics, 50(5), 897, 2006
7 Excimer laser annealing for shallow junction formation in SI power MOS devices
Fortunato G, Privitera V, La Magna A, Mariucci L, Cuscuna M, Svensson BG, Monakhov E, Camalleri M, Magri A, Salinas D, Simon F
Thin Solid Films, 504(1-2), 2, 2006
8 Laser doping for microelectronics and microtechnology
Sarnet T, Kerrien G, Yaakoubi N, Bosseboeuf A, Dufour-Gergam E, Debarre D, Boulmer J, Kakushima K, Laviron C, Hernandez M, Venturini J, Bourouina T
Applied Surface Science, 247(1-4), 537, 2005
9 A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth
Loo R, Caymax M, Meunier-Beillard P, Peytier I, Holsteyns F, Kubicek S, Verheyen P, Lindsay R, Richard O
Applied Surface Science, 224(1-4), 63, 2004
10 Effects of crystalline regrowth on dopant profiles in prearnorphized silicon
Hopstaken MJP, Tamminga Y, Verheijen MA, Duffy R, Venezia VC, Heringa A
Applied Surface Science, 231-2, 688, 2004