검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-kappa dielectrics Srinivasan P, Simoen E, Singanamalla R, Yu HY, Claeys C, Misra D Solid-State Electronics, 50(6), 992, 2006 |
| 2 |
Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices Patil SB, Vairagar AV, Kumbhar AA, Sahu LK, Rao VR, Venkatramani N, Dusane RO, Schroeder B Thin Solid Films, 430(1-2), 63, 2003 |
| 3 |
Boron diffusion in silicon oxides and oxynitrides Ellis KA, Buhrman RA Journal of the Electrochemical Society, 145(6), 2068, 1998 |
| 4 |
The Influence of Fluorine on Boron-Enhanced Diffusion in Silicon by Bf2+ Implantation Through Oxide During High-Temperature Rapid Thermal Anneal Wang LZ, Luo MS, Tseng HH, Ajuria SA Journal of the Electrochemical Society, 144(11), L298, 1997 |