| 1 |
Lateral solid phase epitaxy of amorphously grown Si1-xGex layers on SiO2/Si(100) substrates using in-situ RPCVD postannealing
Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
Thin Solid Films, 593, 91, 2015 |
| 2 |
Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing
Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
Thin Solid Films, 520(8), 3271, 2012 |
| 3 |
Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD
Skibitzki O, Yamamoto Y, Schubert MA, Weidner G, Tillack B
Solid-State Electronics, 60(1), 13, 2011 |
| 4 |
Fabrication of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers
Takahashi K, Sakuraba M, Murota J
Solid-State Electronics, 60(1), 112, 2011 |
| 5 |
Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6
Goto S, Ueda T, Yamagishi C
Solar Energy Materials and Solar Cells, 66(1-4), 631, 2001 |
| 6 |
Dissociative adsorption of silane on the Si(100)-(2x1) surface
Brown AR, Doren DJ
Journal of Chemical Physics, 110(5), 2643, 1999 |
| 7 |
Ge(001): B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics
Kim H, Greene JE
Journal of Vacuum Science & Technology A, 17(2), 354, 1999 |
| 8 |
Absorption spectroscopy of SiH2 near 640 nm
Escribano R, Campargue A
Journal of Chemical Physics, 108(15), 6249, 1998 |
| 9 |
Photoinduced reaction of disilane with the Si(111) surface
Batinica GJ, Crowell JE
Journal of Physical Chemistry B, 102(21), 4135, 1998 |
| 10 |
Epitaxial growth of 3C-SiC on Si(100) by pulsed supersonic free jets of Si(CH3)(4) and Si3H8
Ikoma Y, Endo T, Watanabe F, Motooka T
Journal of Vacuum Science & Technology A, 16(2), 763, 1998 |
