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| No. | Article |
|---|---|
| 1 |
Characterization of in-Situ Phosphorus-Doped Polycrystalline Silicon Films Grown by Disilane-Based Low-Pressure Chemical-Vapor-Deposition Grahn JV, Pejnefors J, Sanden M, Zhang SL, Ostling M Journal of the Electrochemical Society, 144(11), 3952, 1997 |