| 1 |
Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride
Abe K, Nagasaka Y, Kida T, Yamakami T, Hayashibe R, Kamimura K
Thin Solid Films, 516(5), 637, 2008 |
| 2 |
Growth chemistry of SiC alloys from SiF4-CH4 plasmas
Cicala G, Capezzuto P, Bruno G, Rossi MC
Applied Surface Science, 184(1-4), 66, 2001 |
| 3 |
Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD
Matsuura D, Kamiya T, Fortmann CM, Simizu I
Solar Energy Materials and Solar Cells, 66(1-4), 305, 2001 |
| 4 |
From amorphous to microcrystalline silicon deposition in SiF4-H-2-He plasmas: in situ control by optical emission spectroscopy
Cicala G, Capezzuto P, Bruno G
Thin Solid Films, 383(1-2), 203, 2001 |
| 5 |
Structure and transport properties of p-type polycrystalline silicon fabricated from fluorinated source gas
Kamiya T, Nakahata K, Ro K, Shimizu I
Thin Solid Films, 394(1-2), 230, 2001 |
| 6 |
Water absorption characteristics of fluorinated silicon oxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using SiH4, SiF4 and O-2
Byun KM, Lee WJ
Thin Solid Films, 376(1-2), 26, 2000 |
| 7 |
Homogeneous and mixed UF6 clusters with Ar : Calculations of structures and vibrational spectra
Beu TA, Onoe J, Takeuchi K
Journal of Chemical Physics, 109(19), 8295, 1998 |
| 8 |
Dissociative multiple ionization following valence, Br(3d), and Si(2p) inner shell photoexcitation of SiBr4 in the range of 30-133 eV
Boo BH, Liu ZY, Lee SY, Koyano I
Journal of Physical Chemistry A, 102(43), 8261, 1998 |
| 9 |
Reinterpretation of the Lengths of Bonds to Fluorine in Terms of an Almost Ionic Model
Robinson EA, Johnson SA, Tang TH, Gillespie RJ
Inorganic Chemistry, 36(14), 3022, 1997 |
| 10 |
Photoabsorption and Fluorescence Cross-Sections of Sicl4 in the Region of 6.2-31 eV
Ibuki T, Kono M, Asari Y, Hiraya A, Shobatake K
Journal of Chemical Physics, 106(12), 4853, 1997 |
