검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy Ramdani J, Droopad R, Yu Z, Curless JA, Overgaard CD, Finder J, Eisenbeiser K, Hallmark JA, Ooms WJ, Kaushik V, Alluri P, Pietambaram S Applied Surface Science, 159, 127, 2000 |
| 2 |
Growth temperature effect on the heteroepitaxy of InSb films on a Si(001) substrate covered with Ge islands Mori M, Nizawa Y, Nishi Y, Tambo T, Tatsuyama C Thin Solid Films, 333(1-2), 60, 1998 |
| 3 |
Comparison of Conventional Surface Cleaning Methods for Si Molecular-Beam Epitaxy Okumura H, Akane T, Tsubo Y, Matsumoto S Journal of the Electrochemical Society, 144(11), 3765, 1997 |
| 4 |
Secondary-Ion Mass-Spectrometry Analysis of Ultrathin Impurity Layers in Semiconductors and Their Use in Quantification, Instrumental Assessment, and Fundamental Measurements Dowsett MG, Barlow RD, Allen PN Journal of Vacuum Science & Technology B, 12(1), 186, 1994 |