화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer
Liaw YG, Liao WS, Wang MC, Lin CL, Zhou B, Gu HS, Li DS, Zou XC
Solid-State Electronics, 126, 46, 2016
2 Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy
Achour H, Cretu B, Simoen E, Routoure JM, Carin R, Benfdila A, Aoulaiche M, Claeys C
Solid-State Electronics, 112, 1, 2015
3 In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
Achour H, Cretu B, Routoure JM, Carin R, Talmat R, Benfdila A, Simoen E, Claeys C
Solid-State Electronics, 98, 12, 2014
4 DC and low frequency noise performances of SOI p-FinFETs at very low temperature
Achour H, Talmat R, Cretu B, Routoure JM, Benfdila A, Carin R, Collaert N, Simoen E, Mercha A, Claey C
Solid-State Electronics, 90, 160, 2013
5 Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella T, Witters L, Mercha A, Kerner C, Rakowski M, Ortolland C, Ragnarsson LA, Parvais B, De Keersgieter A, Kubicek S, Redolfi A, Vrancken C, Brus S, Lauwers A, Absil P, Biesemans S, Hoffmann T
Solid-State Electronics, 54(9), 855, 2010
6 Improved effective mobility extraction in MOSFETs
Thomas SM, Whall TE, Parker EHC, Leadley DR, Lander RJP, Vellianitis G, Watling JR
Solid-State Electronics, 53(12), 1252, 2009
7 Lateral coupling and immunity to substrate effect in Omega FET devices
Ritzenthaler R, Cristoloveanu S, Faynot O, Jahan C, Kuriyama A, Brevard L, Deleonibus S
Solid-State Electronics, 50(4), 558, 2006