검색결과 : 3건
No. | Article |
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1 |
Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs Van Den Daele W, Le Royer C, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S Solid-State Electronics, 59(1), 25, 2011 |
2 |
New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n plus poly gate Guegan G, Gwoziecki R, Touret P, Raynaud C, Pretet J, Gonnard O, Gouget G, Deleonibus S Solid-State Electronics, 53(7), 741, 2009 |
3 |
C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs Houk Y, Iniguez B, Flandre D, Nazarov A Solid-State Electronics, 50(7-8), 1261, 2006 |