화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube (TM) integration
Llorente CD, Le Royer C, Batude P, Fenouillet-Beranger C, Martinie S, Lu CMV, Allain F, Colinge JP, Cristoloveanu S, Ghibaudo G, Vinet M
Solid-State Electronics, 144, 78, 2018
2 Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
Sklenard B, Batude P, Rafhay Q, Martin-Bragado I, Xu CQ, Previtali B, Colombeau B, Khaja FA, Cristoloveanu S, Rivallin P, Tavernier C, Poiroux T
Solid-State Electronics, 88, 9, 2013
3 Fully depleted silicon on insulator MOSFETs on (110) surface for hybrid orientation technologies
Signamarcheix T, Andrieu F, Biasse B, Casse M, Papon AM, Nolot E, Ghyselen B, Faynot O, Clavelier L
Solid-State Electronics, 59(1), 8, 2011