검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effect of different Ge predeposition amounts on SiC grown on Si (111) Liu ZL, Ren P, Liu JF, Tang J, Xu PS Applied Surface Science, 255(11), 5698, 2009 |
| 2 |
Effects of carbonization and substrate temperature on the growth of 3C-SiC on Si(111) by SSMBE Liu ZL, Liu JF, Ren P, Wu YY, Xu PS Applied Surface Science, 254(10), 3207, 2008 |
| 3 |
Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures Zheng HQ, Yoon SF, Gay BP, Mah KW, Radhakrishnan K, Ng GI Journal of Crystal Growth, 216(1-4), 51, 2000 |
| 4 |
Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy Zhuang QD, Yoon SF, Zheng HQ, Yuan KH Journal of Crystal Growth, 216(1-4), 57, 2000 |