| 1 |
Promising new valved source for Ga or In evaporation
Sacks RN, Bichrt C
Journal of Vacuum Science & Technology B, 25(3), 983, 2007 |
| 2 |
Growth related interference effects in band edge thermometry of semiconductors
Sacks RN, Barlett D, Taylor CA, Williams J
Journal of Vacuum Science & Technology B, 23(3), 1247, 2005 |
| 3 |
Growth and characterization of epitaxial FexAl1-x/(In,Al)As/InP and III-V/FexAl1-x/(In,Al)As/InP structures
Sacks RN, Qin L, Jazwiecki M, Ringel SA, Clevenger MB, Wilt D, Goorsky MS
Journal of Vacuum Science & Technology B, 17(3), 1289, 1999 |
| 4 |
Role of Al content on surface structure evolution of low temperature AlxGa1-xAs and its effect an critical thickness
Carlin JA, Ringel SA, Sacks RN, Yap KS
Journal of Vacuum Science & Technology B, 16(3), 1372, 1998 |
| 5 |
Improved Substrate-Temperature Stability During Molecular-Beam Epitaxy Growth Using Indium Free Mounting of Small Substrates of Various Shapes
Sieg RM, Sacks RN, Grillot PN, Ringel SA
Journal of Vacuum Science & Technology A, 14(6), 3283, 1996 |
| 6 |
Investigation of the Accuracy of Pyrometric Interferometry in Determining AlxGa1-xAs Growth-Rates and Compositions
Sacks RN, Sieg RM, Ringel SA
Journal of Vacuum Science & Technology B, 14(3), 2157, 1996 |
| 7 |
Reduction of Visible Defect Densities in Molecular-Beam Epitaxy-Grown GaAs Using a High-Capacity, Low Flux Transient Ga Source with Novel Crucible Inserts
Sacks RN, Patterson GA, Stair KA
Journal of Vacuum Science & Technology B, 14(3), 2187, 1996 |
