| 1 |
Low-temperature (<= 300 degrees C) formation of orientation-controlled large-grain (>= 10 mu m) Ge-rich SiGe on insulator by gold-induced crystallization
Sadoh T, Park JH, Aoki R, Miyao M
Thin Solid Films, 602, 3, 2016 |
| 2 |
High Sn-concentration (similar to 8%) GeSn by low-temperature (similar to 150 degrees C) solid-phase epitaxy of a-GeSn/c-Ge
Sadoh T, Ooato A, Park JH, Miyao M
Thin Solid Films, 602, 20, 2016 |
| 3 |
Dynamic analysis of rapid-melting growth using SiGe on insulator
Matsumura R, Tojo Y, Kurosawa M, Sadoh T, Miyao M
Thin Solid Films, 557, 125, 2014 |
| 4 |
Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization
Sadoh T, Kurosawa M, Toko K, Miyao M
Thin Solid Films, 557, 135, 2014 |
| 5 |
In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth
Chikita H, Matsumura R, Tojo Y, Yokoyama H, Sadoh T, Miyao M
Thin Solid Films, 557, 139, 2014 |
| 6 |
Sn-induced low-temperature (similar to 150 degrees C) crystallization of Ge on insulator
Ooato A, Suzuki T, Park JH, Miyao M, Sadoh T
Thin Solid Films, 557, 155, 2014 |
| 7 |
Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation
Heya A, Kanda K, Toko K, Sadoh T, Amano S, Matsuo N, Miyamoto S, Miyao M, Mochizuki T
Thin Solid Films, 534, 334, 2013 |
| 8 |
Effects of dose on activation characteristics of P in Ge
Anisuzzaman M, Sadoh T
Thin Solid Films, 520(8), 3255, 2012 |
| 9 |
Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures
Sadoh T, Kurosawa M, Heya A, Matsuo N, Miyao M
Thin Solid Films, 520(8), 3276, 2012 |
| 10 |
Low temperature (similar to 250 degrees C) layer exchange crystallization of Si1-xGex (x=1-0) on insulator for advanced flexible devices
Park JH, Kurosawa M, Kawabata N, Miyao M, Sadoh T
Thin Solid Films, 520(8), 3293, 2012 |
