검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire Lee SN, Paek HS, Ryu HY, Son JK, Sakong T, Jang T, Choi KK, Sung YJ, Kim YH, Kim HK, Chae SH, Ha KH, Chae JH, Kim KS, Kwak JS, Nam OH, Park Y Journal of Crystal Growth, 298, 695, 2007 |
| 2 |
Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire Lee SN, Paek HS, Son JK, Sakong T, Nam OH, Park Y Journal of Crystal Growth, 307(2), 358, 2007 |
| 3 |
Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode Lee SN, Jang T, Son JK, Paek HS, Sakong T, Yoon E, Nam OH, Park Y Journal of Crystal Growth, 287(2), 554, 2006 |
| 4 |
Enhanced optical properties of InGaN MQWs with InGaN underlying layers Son JK, Lee SN, Sakong T, Paek HS, Nam O, Park Y, Hwang JS, Kim JY, Cho YH Journal of Crystal Growth, 287(2), 558, 2006 |
| 5 |
Characterization of optical and electrical quality of Mg-doped InxGa1-xN grown by MOCVD Lee SN, Sakong T, Lee W, Paek H, Son J, Yoon E, Nam O, Park Y Journal of Crystal Growth, 261(2-3), 249, 2004 |
| 6 |
Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD Lee SN, Son J, Sakong T, Lee W, Paek H, Yoon E, Kim J, Cho YH, Nam O, Park Y Journal of Crystal Growth, 272(1-4), 455, 2004 |
| 7 |
Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD Lee SN, Sakong T, Lee W, Paek H, Seon M, Lee IH, Nam O, Park Y Journal of Crystal Growth, 250(1-2), 256, 2003 |